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Research: Nano-device
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NTU-CNST integrated research project: Nano-device
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Nano- Infrared (1-300 um) Light Source and Detector
We have fabricated a high-performance narrow-bandwidth multi-color quantum dot infrared photodetector (QDIP) with peak responses at 5.4, 9.5, and 15.8 £gm, respectively.
The electroluminescence of the light emitting diodes with 5-, 10- and 30-fold Ge p-type quantum dots grown on n+ Si substrates is studied.
MOS Ge/Si Quantum Dot Infrared Photodetectors.
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Nano-photonics -- Photonic Crystals, Wide Band Gap Semiconductor Quantum Dots, and Their Combination
Part 1: Semiconductor Photonic Crystal
Part 2: Photonic Crystal Fiber
Part 3: Wide Band-gap Semiconductor Quantum Dots
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Basic studies and applications of Spintronics
Theoretical analysis F/InAs/F ballistic spintronic device
Set-up of the new HV sputtering Chamber for spin-based device
Experimental studies on the properties of ferromagnetic semiconductor GaMnAs
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